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Updated: Jul 26, 2025

Plasma-Assisted Molecular Beam Epitaxy Growth of Mg3N2 and Zn3N2 Thin Films
Published on: May 11, 2019
Transition from semiconductor to conductor of a Mg2N electride induced by strain
Gui Wang1, Yongle Zhong1, Yiguo Xu2
1Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China. 2050453010@email.szu.edu.cn.
Abstract:
Electrides are a class of materials in which electrons are not bound to atoms but are similar to anions in crystals. To date, there are more than 300 electrides that have been discovered by first-principles. Alkaline-earth metal nitrides (AE2N, AE = Be, Mg, Ca, Sr, and Ba) are an important component of electride materials. Ca2N, Sr2N, and Ba2N structures have been identified and synthesized in previous research studies. Furthermore, the structures of Be2N (R3̄m symmetry) and Mg2N (R3m symmetry) were recently identified. For Mg2N, it has zero-dimension (0D) interstitial localized electrons and band structure with semiconductor properties, which is significantly different from the other AE2N structures (two-dimension electrides and metal properties). Consequently, Mg2N was systematically studied in this work. We found that the pristine Mg2N was an indirect band gap semiconductor with a band gap of 0.243 eV. It transitioned to a metal when 2% stretch stress was applied to the c-axis. Moreover, at 5% stretch stress, the structure exhibited 2D interstitial localized electrons with the superconducting transition temperature (Tc) of 0.3 K. These studies thus provide a deeper understanding of the physicochemical properties of Mg2N as an electride.
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