Related Experiment Video
Updated: Jul 25, 2025
05:39
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
9.7K
Gate-Defined Josephson Weak-Links in Monolayer WTe2.
Michael D Randle1, Masayuki Hosoda2, Russell S Deacon1,3
1Advanced Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan.
Advanced Materials (Deerfield Beach, Fla.)
|June 26, 2023
Summary
Monolayer tungsten ditelluride (WTe2) shows promise for topological quantum computation. Researchers fabricated Josephson weak-link devices, crucial for advancing fault-tolerant quantum computing with topological superconductors.
Area of Science:
- Condensed Matter Physics
- Quantum Computing
- Materials Science
Background:
- Topological insulators and superconductors are key for studying Majorana bound states and fault-tolerant topological quantum computation.
- Monolayer tungsten ditelluride (WTe2) possesses a unique combination of quantum spin Hall insulator (QSHI) and tunable superconducting properties.
Purpose of the Study:
- To investigate the properties of Josephson weak-link devices fabricated using monolayer WTe2.
- To explore the potential of WTe2 as a versatile material for all-in-one topological Josephson weak-links.
Main Methods:
- Fabrication of gate-defined Josephson weak-link devices using monolayer WTe2.
- Experimental measurements of magnetic interference in the fabricated junctions.
- Analysis considering the critical role of 2D superconducting leads.
Main Results:
- Demonstrated successful fabrication of Josephson weak-link devices using monolayer WTe2.
- Identified the critical influence of 2D superconducting leads on interpreting magnetic interference patterns.
- Established facile fabrication procedures for this challenging material.
Conclusions:
- The results represent a significant first step towards creating versatile all-in-one topological Josephson weak-links.
- Monolayer WTe2 is a promising material for advancing topological quantum computing technologies.
Related Concept Videos
01:24Metal-Semiconductor Junctions
395
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
395
02:18Network Covalent Solids
13.6K
Network covalent solids contain a three-dimensional network of covalently bonded atoms as found in the crystal structures of nonmetals like diamond, graphite, silicon, and some covalent compounds, such as silicon dioxide (sand) and silicon carbide (carborundum, the abrasive on sandpaper). Many minerals have networks of covalent bonds.
To break or to melt a covalent network solid, covalent bonds must be broken. Because covalent bonds are relatively strong, covalent network solids are typically...
To break or to melt a covalent network solid, covalent bonds must be broken. Because covalent bonds are relatively strong, covalent network solids are typically...
13.6K
01:11P-N junction
590
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
590
01:12Bewley Lattice Diagram
771
The Bewley lattice diagram, developed by L. V. Bewley, effectively organizes the reflections occurring during transmission-line transients. It visually represents how voltage waves propagate and reflect within a transmission line, making it easier to understand the complex interactions that occur.
771
01:27Biasing of Metal-Semiconductor Junctions
284
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
284
01:17Spin–Spin Coupling: One-Bond Coupling
1.0K
Coupling interactions are strongest between NMR-active nuclei bonded to each other, where spin information can be transmitted directly through the pair of bonding electrons. While nuclei polarize their electrons to the opposite spins, the bonding electron pair has opposite spins. Configurations with antiparallel nuclear spins are expected to be lower in energy. When coupling makes antiparallel states more favorable, J is considered to have a positive value. The one-bond coupling constant, 1J,...
1.0K