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Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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An Experimental Study of Dislocation Dynamics in GaN.

Eugene B Yakimov1, Yury O Kulanchikov1, Pavel S Vergeles1

  • 1Institute of Microelectronics Technology RAS, Chernogolovka 142432, Russia.

Micromachines
|June 28, 2023
PubMed
Summary

Dislocations move easily in Gallium Nitride (GaN) at room temperature, influenced by both intrinsic properties and external obstacles. Electron beam irradiation significantly lowers the energy needed for dislocation glide.

Keywords:
EBICGaNcathodoluminescencedislocation mobilityindentationlow-energy electron beam irradiation

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Area of Science:

  • Materials Science
  • Solid-State Physics
  • Semiconductor Research

Background:

  • Gallium Nitride (GaN) is a critical semiconductor material for optoelectronic and high-power applications.
  • Understanding dislocation dynamics is crucial for improving GaN device performance and reliability.
  • Existing GaN layers grown by HVPE, MOCVD, and ELOG methods exhibit varying dislocation densities.

Purpose of the Study:

  • To investigate the dynamics of dislocations in GaN layers at room temperature.
  • To analyze the impact of thermal annealing and electron beam irradiation on dislocation behavior.
  • To elucidate the mechanisms governing dislocation glide in GaN.

Main Methods:

  • Electron-beam-induced current (EBIC) microscopy.
  • Cathodoluminescence (CL) spectroscopy.
  • Indentation and scratching techniques to introduce dislocations.

Main Results:

  • The Peierls barrier for dislocation glide in GaN is below 1 eV, enabling room temperature mobility.
  • Dislocation mobility is governed by both intrinsic properties and localized obstacles, including threading dislocations.
  • Electron beam irradiation drastically reduces the activation energy for dislocation glide to tens of meV.

Conclusions:

  • Dislocation movement in GaN is a complex process involving Peierls barrier overcoming and interaction with localized obstacles.
  • Threading dislocations act as significant impediments to basal plane dislocation glide.
  • Electron beam irradiation facilitates dislocation movement by primarily enabling overcoming of localized obstacles.