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Area of Science:

Semiconductor Manufacturing
Optical Metrology
Nanotechnology

Background:

Modern semiconductor manufacturing demands stringent overlay control.
Diffraction-based overlay (DBO) metrology is crucial for achieving this control.
Multi-wavelength measurements are often necessary for robust DBO in the presence of target deformations.

Purpose of the Study:

To propose a novel multi-spectral DBO metrology approach.
To enable direct and snapshot measurement of overlay errors.
To enhance accuracy and robustness in semiconductor overlay metrology.

Main Methods:

Utilizing the linear relationship between overlay errors and specific off-diagonal Mueller matrix elements (ΔM).
Analyzing the zeroth-order diffraction of overlay target gratings.
Implementing a snapshot measurement technique without rotating or active polarization components.

Main Results:

Demonstrated capability for multi-spectral overlay metrology in a single shot.
Validated the proposed method through simulation results.
Showcased direct measurement of ΔM over a broad spectral range.

Conclusions:

The proposed multi-spectral DBO metrology offers a promising solution for advanced semiconductor fabrication.
The snapshot, direct measurement approach simplifies and enhances overlay metrology.
This method provides accurate and robust overlay error assessment, even with target deformations.