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Related Concept Videos

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Two NMR-active nuclei bonded to a central atom can be involved in geminal or two-bond coupling. Geminal coupling is commonly seen between diastereotopic protons in chiral molecules and unsymmetrical alkenes, among others.
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In bromoethane, the three methyl protons are coupled to the two methylene protons that are three bonds away. In accordance with the n+1 rule, the signal from the methyl protons is split into three peaks with 1:2:1 relative intensities. The methylene protons appear as a quartet, with the relative intensities of 1:3:3:1.
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Coupling interactions are strongest between NMR-active nuclei bonded to each other, where spin information can be transmitted directly through the pair of bonding electrons. While nuclei polarize their electrons to the opposite spins, the bonding electron pair has opposite spins. Configurations with antiparallel nuclear spins are expected to be lower in energy. When coupling makes antiparallel states more favorable, J is considered to have a positive value. The one-bond coupling constant, 1J,...
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Spin–Spin Coupling: Three-Bond Coupling (Vicinal Coupling)01:22

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Vicinal or three-bond coupling is commonly observed between protons attached to adjacent carbons. Here, nuclear spin information is primarily transferred via electron spin interactions between adjacent C‑H bond orbitals. This generally favors the antiparallel arrangement of spins, so 3J values are usually positive.
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Coordination compounds and complexes exhibit different colors, geometries, and magnetic behavior, depending on the metal atom/ion and ligands from which they are composed. In an attempt to explain the bonding and structure of coordination complexes, Linus Pauling proposed the valence bond theory, or VBT, using the concepts of hybridization and the overlapping of the atomic orbitals. According to VBT, the central metal atom or ion (Lewis acid) hybridizes to provide empty orbitals of suitable...
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Radio Frequency Magnetron Sputtering of GdBa2Cu3O7âˆ'ÃŽ ´/ La0.67Sr0.33MnO3 Quasi-bilayer Films on SrTiO3 STO Single-crystal Substrates
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Field-free spin-orbit torque switching in interlayer exchange coupled Co/Ta/CoTb.

Chuangwen Wu1, Xiangqing Zhou1, Guang Zeng1

  • 1Faculty of Physics and Electronic Science, Hubei University, Wuhan 430062, People's Republic of China.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|July 5, 2023
PubMed
Summary

This study introduces a novel T-type spin-orbit torque device for spintronic memory. It demonstrates deterministic magnetization switching and multistate synaptic plasticity, paving the way for neuromorphic computing applications.

Keywords:
asymmetric domain wall motionfield-free switchingmultistate synaptic plasticityspin-orbit torque

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Area of Science:

  • Spintronics
  • Materials Science
  • Condensed Matter Physics

Background:

  • Spin-orbit torque (SOT) devices are crucial for advanced memory and computing.
  • Field-free SOT switching is essential for energy-efficient spintronic devices.
  • T-type magnetic configurations offer unique properties for device applications.

Purpose of the Study:

  • To investigate a T-type field-free spin-orbit torque device with coupled in-plane and perpendicular magnetic layers.
  • To explore current-induced magnetization switching and domain wall motion.
  • To demonstrate the device's potential for spintronic memory and neuromorphic computing.

Main Methods:

  • Fabrication of a Co/Ta/CoTb heterostructure with a non-magnetic Ta spacer.
  • Characterization of interlayer exchange coupling (IEC) and its effect on magnetization.
  • Magneto-optic Kerr effect (MOKE) measurements for domain wall motion analysis.
  • Investigation of anomalous Hall resistance for synaptic plasticity demonstration.

Main Results:

  • Deterministic current-induced magnetization switching of the perpendicular CoTb layer was achieved via in-plane effective field from IEC.
  • Field-driven and current-driven asymmetric domain wall motion were observed and characterized.
  • Multistate synaptic plasticity functionality was demonstrated, correlating anomalous Hall resistance with current pulses.

Conclusions:

  • The T-type SOT device enables efficient magnetization switching and domain wall motion.
  • The device exhibits potential for implementing multistate synaptic plasticity.
  • This research highlights the device's promise for next-generation spintronic memory and neuromorphic computing.