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Defects boost graphitization for highly conductive graphene films.

Qing Zhang1,2, Qinwei Wei1,2, Kun Huang1,2

  • 1Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China.

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|July 7, 2023
PubMed
Summary
This summary is machine-generated.

Nitrogen doping enhances graphene film crystallization by retaining defects during high-temperature graphitization. This significantly boosts electrical and thermal conductivity for advanced electronics and thermal management applications.

Keywords:
defectselectrical and thermal conductivitygraphene filmgraphitizationthermal management and EMI shielding

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Solid State Physics

Background:

  • Macroscopic, highly crystalline graphene films are crucial for advanced electronics, telecommunications, and thermal management.
  • Current graphitization methods yield small grain sizes and structural disorders, limiting graphene's conductivity.
  • High-temperature processing of graphene precursors like graphene oxide results in suboptimal film properties.

Purpose of the Study:

  • To develop a method for fabricating highly crystalline graphene films with superior electrical and thermal conductivities.
  • To investigate the role of high-temperature defects in accelerating grain growth and ordering during graphene graphitization.
  • To explore the potential of nitrogen doping in controlling defect retention for enhanced graphene properties.

Main Methods:

  • Utilizing nitrogen doping to retard lattice restoration in defective graphene during high-temperature graphitization (2000°C–3000°C).
  • Analyzing the impact of retained defects (vacancies, dislocations, grain boundaries) on graphene film microstructure and ordering.
  • Characterizing the electrical conductivity, thermal conductivity, and electromagnetic interference shielding effectiveness of the fabricated graphene films.

Main Results:

  • Nitrogen doping enabled a 100-fold increase in grain size and significant improvements in electrical (64-fold) and thermal (28-fold) conductivity between 2000°C and 3000°C.
  • Achieved highly ordered crystalline graphene films with electrical conductivity of ~2.0 × 10^4 S cm⁻¹ and thermal conductivity of ~1.7 × 10³ W m⁻¹ K⁻¹.
  • Demonstrated superhigh electromagnetic interference shielding effectiveness of ~90 dB at 10 μm thickness, outperforming MXene films.

Conclusions:

  • High-temperature defects, when retained via nitrogen doping, substantially accelerate graphene film crystallization and property enhancement.
  • The developed method produces highly conductive graphene films suitable for demanding electronic and thermal applications.
  • This strategy offers a general approach to improve the synthesis and properties of various carbon materials.