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Electrical Stability Modeling Based on Surface Potential for a-InGaZnO TFTs under Positive-Bias Stress and Light

Xiaoming Huang1, Wei Cao1, Chenyang Huang1

  • 1College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.

Micromachines
|July 8, 2023
PubMed

Keywords:
a-IGZO TFTselectrical stability modelsub-gap density of statessurface potential

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