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A Novel Program Scheme for Z-Interference Improvement in 3D NAND Flash Memory

Jianquan Jia1,2, Lei Jin1,2, Xinlei Jia1,2

  • 1Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.

Micromachines
|July 8, 2023
PubMed

Keywords:
3D NANDadjacent gate pass voltagecell-to-cell z-interference programcharge-trapping memory

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