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Updated: Jul 23, 2025

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

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Published on: October 13, 2017

Correlation between the Surface Undulation and Luminescence Characteristics in Semi-Polar 112¯2 InGaN/GaN

Mi-Hyang Sheen¹, Yong-Hee Lee¹, Jongjin Jang²

¹Research Institute of Advanced Materials, Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea.

Nanomaterials (Basel, Switzerland)

|July 14, 2023

Summary

Growing indium gallium nitride/gallium nitride (InGaN/GaN) multi-quantum wells on sapphire substrates resulted in surface undulation. Facets showed varying indium incorporation, with one facet exhibiting approximately 4 at% higher indium content than the other.

Keywords:

TEM-cathodoluminescence indium concentration semi-polar GaN surface undulation

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Area of Science:

Materials Science
Solid State Physics
Semiconductor Heterostructures

Background:

Indium gallium nitride/gallium nitride (InGaN/GaN) multi-quantum wells (MQWs) are crucial for optoelectronic devices.
Growth on semi-polar substrates like m-plane (1-100) sapphire can lead to complex surface morphology and facet formation.
Understanding indium incorporation differences across these facets is key to optimizing device performance.

Purpose of the Study:

To investigate the structural and luminescence properties of InGaN/GaN MQWs grown on semi-polar (1-100) sapphire.
To analyze the differences in indium incorporation between the two distinct facets formed within the MQWs.
To correlate structural characteristics with luminescence behavior.

Main Methods:

Growth of InGaN/GaN MQWs on a semi-polar m-plane (1-100) sapphire substrate.
Transmission electron microscopy (TEM) for structural analysis.
Cathodoluminescence (CL) spectroscopy for luminescence characterization.
X-ray yield and annular dark-field imaging for indium concentration analysis.

Main Results:

Surface undulation and two distinct facets (parallel to 112¯2 and 011¯1) were observed in the InGaN/GaN MQWs.
Significant differences in indium incorporation were identified between the two facets.
Quantitative analysis revealed approximately 4 at% higher indium incorporation in the 011¯1 facets compared to the 112¯2 facets under identical growth conditions.

Conclusions:

Facet-dependent indium incorporation in InGaN/GaN MQWs grown on semi-polar substrates is a critical factor influencing material properties.
The observed differences in indium concentration can be attributed to the distinct crystallographic orientations of the facets.
Optimizing growth conditions to control facet formation and indium distribution is essential for developing high-performance InGaN-based optoelectronic devices.