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Bottom-up, Chip-Scale Engineering of Low Threshold, Multi-Quantum-Well Microring Lasers
Wei Wen Wong1,2, Naiyin Wang1,2, Bryan D Esser3
1Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia.
ACS Nano
|July 14, 2023
Summary
Researchers developed a new method for creating thousands of on-chip microring lasers using selective area epitaxy. This technique offers improved scalability and reproducibility for integrated optoelectronics and nanophotonics.
Area of Science:
- Optoelectronics
- Nanophotonics
- Materials Science
Background:
- Integrated, on-chip lasers are crucial for advanced optoelectronic and nanophotonic circuits.
- Traditional fabrication methods for microcavity lasers face challenges in scalability and reproducibility.
- III-V materials are highly relevant for technological applications in photonics.
Purpose of the Study:
- To deterministically engineer thousands of microring lasers on a single chip.
- To achieve catalyst-free, epitaxial growth of InAsP/InP material in ring-like cavities.
- To develop a reproducible fabrication method for ultrasmooth cavity sidewalls.
Main Methods:
- Utilized selective area epitaxy for deterministic laser engineering.
- Employed catalyst-free, epitaxial growth of InAsP/InP with multi-quantum-well heterostructures.
- Investigated adatom diffusion lengths on crystal facets to control sidewall smoothness.
Main Results:
- Successfully engineered thousands of microring lasers on a single chip.
- Achieved reproducible, ultrasmooth cavity sidewalls through controlled adatom diffusion.
- Demonstrated tunable emission in the telecommunication O-band with low-threshold lasing.
- Attained over 80% device efficacy across the chip.
Conclusions:
- Selective area epitaxy enables deterministic fabrication of high-performance on-chip lasers.
- The developed method overcomes limitations of traditional techniques, enhancing scalability and reproducibility.
- This advancement is a significant step towards fully integrated III-V photonic platforms for next-generation circuits.
