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Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
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Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
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Silicon multi-mode micro-ring modulator for improved robustness to optical nonlinearity.

Jiacheng Liu, Jiangbing Du, Weihong Shen

    Optics Letters
    |July 14, 2023
    PubMed
    Summary
    This summary is machine-generated.

    This study introduces a multi-mode silicon micro-ring modulator that mitigates optical nonlinearity. By using the TE1 mode, it enhances robustness against high input optical power, improving modulator performance.

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    Area of Science:

    • Photonics
    • Optical Engineering
    • Materials Science

    Background:

    • Silicon micro-ring modulators are crucial for optical communications but suffer from performance degradation due to optical nonlinearity at high input power.
    • The resonant nature of micro-rings amplifies nonlinear effects, limiting device performance.

    Purpose of the Study:

    • To propose and experimentally demonstrate a novel multi-mode silicon micro-ring modulator.
    • To mitigate the impact of optical nonlinear effects in silicon micro-ring modulators by operating in a higher-order mode.

    Main Methods:

    • Developed a multi-mode silicon micro-ring modulator design.
    • Experimentally operated the modulator in the TE1 mode.
    • Characterized the modulator's performance under varying input optical power, focusing on resonance spectrum shape and wavelength shift.

    Main Results:

    • The TE1 mode demonstrated a higher nonlinear threshold compared to the TE0 mode due to increased waveguide loss and effective mode area.
    • Under 10 mW optical input power, the resonance spectrum maintained a symmetric Lorentz shape.
    • The resonant wavelength shift was less than one resonance linewidth, indicating improved robustness.

    Conclusions:

    • The multi-mode silicon micro-ring modulator operating in the TE1 mode effectively mitigates optical nonlinear effects.
    • This approach offers improved robustness against high input optical power compared to conventional silicon micro-ring modulators.
    • The findings pave the way for higher-performance silicon photonic devices.