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06:43
Writing and Low-Temperature Characterization of Oxide Nanostructures
Published on: July 18, 2014
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Spin-to-Charge Conversion in All-Oxide La2/3Sr1/3MnO3/SrIrO3 Heterostructures
Sergi Martin-Rio1, Zorica Konstantinovic2, Alberto Pomar1
1Instituto de Ciencia de Materiales de Barcelona, ICMAB-CSIC, Campus Universitario UAB, Bellaterra, Barcelona 08193, Spain.
ACS Applied Materials & Interfaces
|July 21, 2023
Summary
Spin injection into SrIrO3 (SIO) layers within La2/3Sr1/3MnO3/SIO heterostructures was investigated. Despite interfacial interdiffusion, SIO exhibits a spin Hall angle comparable to traditional materials, suggesting its potential for spintronic applications.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Spintronics
Background:
- Investigating spin injection and spin-charge conversion in all-oxide heterostructures is crucial for advancing spintronic devices.
- La2/3Sr1/3MnO3 (LSMO) is a ferromagnetic half-metal, and SrIrO3 (SIO) is a material with potential spin-orbit coupling properties.
Purpose of the Study:
- To study spin injection and spin-charge conversion processes in LSMO/SIO heterostructures.
- To understand the role of SIO layer thickness and interfacial features on spin dynamics.
- To determine the spin Hall angle of SIO.
Main Methods:
- Ferromagnetic resonance (FMR) was used to generate pure spin currents via spin pumping from LSMO.
- High-resolution scanning transmission electron microscopy (HR-STEM) and energy-dispersive X-ray spectroscopy (EDS) were employed for interface analysis.
- Inverse spin Hall effect (ISHE) measurements were conducted to probe spin-charge conversion efficiency.
Main Results:
- Spin injection into SIO layers was confirmed by changes in FMR linewidth, though spin mixing conductance was lower than in conventional systems.
- HR-STEM revealed atomically sharp interfaces, while EDS indicated interdiffusion of La, Ir, and Mn at the interface.
- ISHE measurements showed that interfacial features significantly impact spin injection efficiency, with lower SIO thickness yielding larger voltage signals.
Conclusions:
- The spin diffusion length/SIO layer thickness ratio is critical for efficient spin injection.
- The determined spin Hall angle of SIO (≈1.12% at 250 K) is comparable to that of permalloy/platinum systems.
- SIO shows promise as a potential spin-Hall material for spintronic applications.
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