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Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
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Layer-Dependent Interaction Effects in the Electronic Structure of Twisted Bilayer Graphene Devices

Nicholas Dale1,2, M Iqbal Bakti Utama2,3, Dongkyu Lee4,5

  • 1Department of Physics, University of California, Berkeley, California 94720, United States.

Nano Letters
|July 24, 2023
PubMed

Keywords:
ARPESband gap.electron−electron interactionmoiré heterostructuressymmetry-breakingtwisted bilayer graphene

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