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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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Universal radiation tolerant semiconductor.

Alexander Azarov1, Javier García Fernández2, Junlei Zhao3

  • 1University of Oslo, Centre for Materials Science and Nanotechnology, PO Box 1048 Blindern, N-0316, Oslo, Norway. alexander.azarov@smn.uio.no.

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Gallium oxide (Ga2O3) with gamma/beta double polymorph structures shows exceptional radiation tolerance, resisting disorder up to hundreds of displacements per atom without amorphization. This makes it a promising material for radiation-hardened semiconductor applications.

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Radiation Damage

Background:

  • Crystalline materials typically degrade or amorphize under high radiation fluences.
  • Existing semiconductors like Silicon (Si) show limited radiation tolerance, becoming amorphous after minimal atomic displacement.

Purpose of the Study:

  • To investigate the radiation tolerance of gamma/beta (γ/β) double polymorph Gallium oxide (Ga2O3) structures.
  • To elucidate the mechanisms behind the observed high radiation tolerance in γ/β Ga2O3.
  • To understand the β-to-γ Ga2O3 transformation under irradiation.

Main Methods:

  • Irradiation experiments at room temperature using gamma/beta (γ/β) double polymorph Ga2O3.
  • Analysis of material crystallinity and disorder accumulation up to hundreds of displacements per atom.
  • Investigating the role of Ga- and O-sublattice properties in radiation response.
  • Studying the β-to-γ Ga2O3 transformation as a function of disorder and implanted species.

Main Results:

  • γ/β Ga2O3 structures exhibit remarkable radiation tolerance, withstanding high disorder levels without significant loss of crystallinity.
  • The oxygen sublattice in γ-Ga2O3 demonstrates a strong recrystallization trend, counteracting atomic displacement.
  • The transformation from β-Ga2O3 to γ-Ga2O3 is linked to increased disorder and influenced by implanted atom chemistry.

Conclusions:

  • γ/β double polymorph Ga2O3 demonstrates superior radiation tolerance compared to conventional semiconductors like Si.
  • The unique sublattice properties and recrystallization behavior of γ-Ga2O3 contribute to its radiation resistance.
  • Ga2O3 with γ/β double polymorph structures represents a new class of universally radiation-tolerant semiconductors.