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Updated: Jul 19, 2025

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides
Published on: May 29, 2018
Spray pyrolysis-derived robust ferroelectric BiFeO3 thin films
M C Nagashree1, S D Kulkarni2, B V Rajendra1
1Department of Physics, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal-576104, India. bv.rajendra@manipal.edu.
Spray pyrolysis enables scalable, low-cost fabrication of high-quality bismuth ferrite thin films. Optimized films show robust ferroelectric properties, paving the way for advanced electronic devices and sensors.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Scalable and cost-effective synthesis of high-quality ferroic films is essential for next-generation electronic devices.
- Bismuth ferrite (BiFeO3) is a promising multiferroic material with potential applications in sensors and memory devices.
Purpose of the Study:
- To develop a scalable and low-cost method for fabricating high-quality bismuth ferrite thin films.
- To investigate the influence of annealing conditions on the structural and ferroelectric properties of bismuth ferrite thin films.
- To explore the relationship between microstructure and ferroelectric domain behavior.
Main Methods:
- Solution-based spray pyrolysis was used to deposit bismuth ferrite thin films on glass substrates.
- X-ray diffraction (XRD) was employed to analyze the crystallographic structure and orientation.
- Microstructural characterization and ferroelectric domain imaging were performed.
Main Results:
- Optimized films exhibited polycrystalline nanostructured grains with preferred (110) orientation.
- A mixed Fe2+/3+ valence state and oxygen vacancies were identified, influencing film properties.
- Robust nanoscale polarization switching was observed, with domain sizes correlating to nanocrystalline grain dimensions.
- Surface-energy-related mechanisms were suggested to play a role in domain pattern formation.
Conclusions:
- Spray pyrolysis is a viable technique for producing high-quality ferroelectric bismuth ferrite thin films.
- Optimized annealing conditions yield films with desirable structural and ferroelectric characteristics.
- The findings offer new avenues for developing cost-effective, scalable advanced electronic devices utilizing ferroelectric materials.
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