Cross-Scale Topography Achieved by MOPL with Positive Photoresist to Regulate the Cell Behavior

Area of Science:

• Materials Science and Engineering
• Nanotechnology
• Biotechnology

Background:

• Cross-scale micro- and nano-structures are crucial in diverse fields like semiconductors, MEMS, chemistry, and cell biology.
• Positive photoresist is a common lithography material, but patterning complex cross-scale structures with high resolution is challenging due to optical diffraction limits.
• Existing methods struggle with flexible patterning of positive photoresist for creating intricate micro- and nano-scale features.

Purpose of the Study:

• To achieve flexible and precise patterning of cross-scale micro-nano structures using positive photoresist.
• To overcome the limitations of optical diffraction in feature resolution for micro- and nano-fabrication.
• To explore the application of fabricated structures in regulating cell behavior and advancing nanoelectronics.

Main Methods:

• Utilized femtosecond laser maskless optical projection lithography (MOPL) for patterning positive photoresist.
• Investigated the relationship between exposure dose and groove width to control feature size.
• Fabricated large-area topography with dimensions relevant to cell biology.

Main Results:

• Successfully fabricated cross-scale patterned micro-nano structures with high resolution using the MOPL technique.
• Achieved a minimum feature size of 112 nm at an exposure dose of 110 µW.
• Demonstrated efficient fabrication of large-area topography suitable for cell culture and behavior regulation.

Conclusions:

• The femtosecond laser MOPL technique offers a viable solution for flexible and precise patterning of cross-scale structures in positive photoresist.
• The ability to control feature size precisely opens new possibilities for nanoelectronic devices.
• The fabricated topographies show potential for applications in tissue engineering and controlling cellular functions.