Effect of Adding Intermediate Layers on the Interface Bonding Performance of WC-Co Diamond-Coated Cemented Carbide...

The interface models of diamond-coated WC-Co cemented carbide (DCCC) were constructed without intermediate layers and with different interface terminals, such as intermediate layers of TiC, TiN, CrN, and SiC. The adhesion work of the interface model was calculated based on the first principle. The results show that the adhesion work of the interface was increased after adding four intermediate layers. Their effect on improving the interface adhesion performance of cemented carbide coated with diamond was ranked in descending order as follows: SiC > CrN > TiC > TiN. The charge density difference and the density of states were further analyzed. After adding the intermediate layer, the charge distribution at the interface junction was changed, and the electron cloud at the interface junction overlapped to form a more stable chemical bond. Additionally, after adding the intermediate layer, the density of states of the atoms at the interface increased in the energy overlapping area. The formant formed between the electronic orbitals enhances the bond strength. Thus, the interface bonding performance of DCCC was enhanced. Among them, the most obvious was the interatomic electron cloud overlapping at the diamond/SiC_C-Si/WC-Co interface, its bond length was the shortest (1.62 Å), the energy region forming the resonance peak was the largest (-5-20 eV), and the bonding was the strongest. The interatomic bond length at the diamond/TiN_Ti/WC-Co interface was the longest (4.11 Å), the energy region forming the resonance peak was the smallest (-5-16 eV), and the bonding was the weakest. Comprehensively considering four kinds of intermediate layers, the best intermediate layer for improving the interface bonding performance of DCCC was SiC, and the worst was TiN.