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MOSFET: Enhancement Mode01:22

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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
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A Novel Atomic-Level Post-Etch-Surface-Reinforcement Process for High-Performance p-GaN Gate HEMTs Fabrication.

Luyu Wang1, Penghao Zhang1, Kaiyue Zhu2

  • 1State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China.

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A new post-etch surface reinforcement (PESR) process repairs damage on p-GaN surfaces. This method significantly enhances the performance and reliability of p-GaN gate HEMTs, reducing on-resistance and current collapse.

Keywords:
etch induced damageinterface statep-GaN gate HEMTssurface reinforcement

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Area of Science:

  • Materials Science
  • Semiconductor Device Physics

Background:

  • Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) are crucial for power electronics.
  • Etching processes for p-GaN gate fabrication can induce surface damage, degrading device performance.
  • Reliable fabrication of high-performance p-GaN gate HEMTs requires effective surface damage recovery.

Purpose of the Study:

  • To develop and evaluate a novel atomic-level post-etch surface reinforcement (PESR) process.
  • To recover the etching-induced damage region in p-GaN for improved p-GaN gate HEMTs fabrication.
  • To assess the impact of PESR on AlGaN surface morphology, crystallization, and electrical properties.

Main Methods:

  • A two-step PESR process involving O2 plasma surface modification and BCl3 plasma oxide removal.
  • Atomic Force Microscopy (AFM) for surface morphology characterization.
  • Confocal Raman spectroscopy for lattice crystallization analysis.
  • Electrical characterization including Metal-Semiconductor (MS) Schottky diodes and MIS Capacitance-Voltage (C-V) measurements.
  • X-ray Photoelectron Spectroscopy (XPS) for surface chemical analysis.

Main Results:

  • PESR restored AlGaN surface morphology and lattice crystallization to as-epitaxial levels.
  • Significant improvements in AlGaN surface quality were observed: one order lower surface leakage and 6x lower interface density of states (Dit).
  • PESR effectively removed etching-induced F-byproducts and Ga-oxides.
  • Integrated PESR in p-GaN gate HEMTs fabrication led to ~20% lower on-resistance and ~25% less current collapse at 40V Vds.

Conclusions:

  • The developed PESR process is highly effective in repairing p-GaN etching-induced damage.
  • PESR significantly enhances the surface quality and electrical properties of AlGaN.
  • The integration of PESR into p-GaN gate HEMTs fabrication boosts device performance and reliability, showing great potential for future applications.