Photoelectric performance of InSe vdW semi-floating gate p-n junction transistor.

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Van der Waals (vdW) materials are key components in advanced electronic devices like memory and logic applications.
• Semi-floating gate transistors leverage vdW materials for enhanced functionality.

Purpose of the Study:

• To propose and investigate a novel semi-floating gate photoelectric p-n junction transistor structure.
• To explore the tunable photoelectric properties and switching capabilities of the InSe/h-BN/Gr device.

Main Methods:

• Fabrication of a stacked InSe/h-BN/Gr heterostructure.
• Modulation of InSe's electrical properties (N-type and P-type) via gate voltage.
• Investigation of device switching between N-type resistance and p-n junction characteristics.
• Analysis of laser-induced modulation on resistance and photoelectric properties.

Main Results:

• The InSe/h-BN/Gr device demonstrated free switching between N-type resistance and p-n junction states.
• Under dark conditions, the p-n junction achieved a high rectification ratio of 10^7.
• Laser modulation resulted in a high photoresponse (1.154 × 10^4 A/W), detectivity (5.238 × 10^12 Jones), external quantum efficiency (5.435 × 10^6%), and low noise equivalent power (1.262 × 10^-16 W/Hz^1/2).

Conclusions:

• The developed transistor exhibits tunable photoelectric properties and high performance metrics.
• This work provides a foundation for creating highly sensitive, fast-response tunable photoelectric p-n junction transistors.
• The device's ability to switch states and respond to light opens avenues for advanced optoelectronic applications.