Fabrication of AIE Polymer-Functionalized Reduced Graphene Oxide for Information Storage

Reduced graphene oxide (RGO) has been extensively studied and applied in optoelectronic systems, but its unstable dispersion in organic solvents has limited its application. To overcome this problem, the newly designed and developed aggregation-induced emission (AIE) material poly[(9,9-bis(6-azidohexyl)-9H-fluorene)-alt-(9-(4-(1,2,2-triphenylvinyl)phenyl)-9H-carbazole)] (PAFTC) was covalently grafted onto RGO to produce (PFTC-g-RGO). The solubility of two-dimensional graphene was improved by incorporating it into the backbone of PAFTC to form new functional materials. In resistive random access memory (RRAM) devices, PFTC-g-RGO was used as the active layer material after it was characterized. The fabricated Al/PFTC-g-RGO/ITO device exhibited nonvolatile bistable resistive switching performances with a long retention time of over 10⁴ s, excellent endurance of over 200 switching cycles, and an impressively low turn-ON voltage. This study provides important insights into the future development of AIE polymer-functionalized nanomaterials for information storage.