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    Area of Science:

    • Optics and Photonics
    • Computational Science
    • Semiconductor Manufacturing

    Background:

    • Accurate modeling of 3D mask effects is crucial for computational lithography (CL), especially for extreme ultraviolet (EUV) applications.
    • Existing methods struggle with the computational complexity and efficiency required for complex EUV mask patterns.

    Purpose of the Study:

    • To introduce an efficient and accurate method for 3D mask modeling in EUV computational lithography.
    • To address the challenges posed by significant 3D mask effects in EUV lithography.

    Main Methods:

    • Development and application of a modified Born series (MBS) method for EUV mask modeling.
    • Comparison of MBS method's performance against the finite-difference time-domain (FDTD) method.

    Main Results:

    • The MBS method achieves comparable accuracy to FDTD but is two orders of magnitude faster for investigated examples.
    • Computational time for the MBS method is further reduced with minor changes in mask patterns.
    • Demonstrated high efficiency in constructing accurate 3D mask models.

    Conclusions:

    • The modified Born series (MBS) method offers a highly efficient and accurate solution for 3D EUV mask modeling.
    • This method has significant potential to advance computational lithography for complex EUV mask patterns.
    • The efficiency gains are particularly notable for applications involving slight mask pattern variations.