Deterministic field-free voltage-induced magnetization switching with self-regulated precession for low-power memory

Area of Science:

• Materials Science
• Electrical Engineering
• Computer Engineering

Background:

• Spintronic devices offer non-volatility and radiation resilience for computing and memory.
• Current-driven spintronic devices suffer from high power consumption and slow switching speeds.
• Voltage-controlled magnetic anisotropy (VCMA) presents a potential solution but has limitations.

Purpose of the Study:

• To propose a novel deterministic self-regulated precessional ferromagnet switching method.
• To overcome the drawbacks of existing VCMA-based switching techniques.
• To enhance the efficiency and reduce the error rate in spintronic device switching.

Main Methods:

• Micromagnetic simulations were employed for verification.
• The proposed method breaks energy symmetry using MTJ resistance dependence.
• Benchmarking against existing literature methods was performed.

Main Results:

• Significantly improved write error rate compared to other VCMA methods.
• Achieved a mean energy consumption of 38.22 fJ.
• Demonstrated a mean switching delay of 3.77 ns.

Conclusions:

• The novel self-regulated precessional switching method offers a viable solution for efficient spintronic devices.
• The method eliminates the need for external magnetic fields and large currents.
• This advancement holds promise for next-generation computing and memory technologies.