Improving the Luminescence Performance of Monolayer MoS₂ by Doping Multiple Metal Elements with CVT Method

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Two-dimensional (2D) transition metal dichalcogenides (TMDCs) are crucial for advanced electronic and optoelectronic devices.
• Controlled doping of 2D semiconductors is challenging but essential for tuning material properties.

Purpose of the Study:

• To develop a method for doping non-like elements into monolayer molybdenum disulfide (MoS2).
• To investigate the impact of doping on the electronic, optical, and catalytic properties of MoS2.

Main Methods:

• Single-step chemical vapor transport (CVT) for doping MoS2 with Hf, Zr, Gd, and Dy.
• Scanning transmission electron microscopy (STEM) with probe corrector for atomic structure confirmation.

Main Results:

• Successful doping of monolayer MoS2 with various metal elements was achieved.
• The host crystal structure of MoS2 was preserved without atomic aggregation.
• Doping adjusted the band structure, enhancing fluorescence and carrier effects.

Conclusions:

• A novel growth method for doping 2D MoS2 with non-like elements was demonstrated.
• This approach offers a pathway to modify the properties of MoS2 and other 2D materials for diverse applications.