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Demonstration of Germanium Vertical Gate-All-Around Field-Effect Transistors Featured by Self-Aligned High-κ Metal

Lu Xie1,2, Huilong Zhu1,2, Yongkui Zhang1

  • 1Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.

ACS Nano
|October 12, 2023
PubMed

Keywords:
Gehourglass-shaped channelsnanosheet (NW/NS)nanowireozone postoxidation (OPO)p-type vertical sandwich gate-all-around field-effect transistors (pVSAFETs)self-aligned metal gates

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