Related Experiment Video
Updated: Jul 12, 2025

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
Published on: November 24, 2016
A 37-40 GHz 6-Bits Switched-Filter Phase Shifter Using 150 nm GaN HEMT
Jae-Hyeok Song1, Eun-Gyu Lee1, Jae-Eun Lee1
1Department of Electronics Engineering, Chungnam National University, Daejeon 34134, Republic of Korea.
Abstract:
In this paper, we present a 6-bit phase shifter designed and fabricated using the 150 nm GaN HEMT process. The designed phase shifter operates within the n260 (37~40 GHz) band, as specified in the 5G NR standard, and employs the structure of a switched-filter phase shifter. By serially connecting six single-bit phase shifters, ranging from 180° to 5.625°, the designed phase shifter achieves a phase range of 360°. The fabricated phase shifter exhibits a minimum insertion loss of 5 dB and an RMS phase error of less than 5.36° within the 37 to 40 GHz. This phase shifter is intended for seamless integration with high-power RF circuits.
More Related Videos
Related Concept Videos
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
MOSFET Amplifiers
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Cut-off Frequency of BJT
Alpha Cut-Off Frequency: Pertinent to the common-base configuration, the alpha cut-off frequency defines the upper-frequency limit at which the current gain, alpha, remains stable. As...
Small-Signal Analysis of MOSFET Amplifiers

