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Ultra-Broadband High-Entropy Oxide Absorber Layer for Enhanced Photodetector Performance.

Chia-Yun Chen1, Jyun-Yi Li1, Kuan-Yi Kuo1

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ACS Applied Materials & Interfaces
|October 31, 2023
PubMed
Summary
This summary is machine-generated.

A new high-entropy oxide (HEO) material exhibits broadband light absorption and enables a highly sensitive photodetector. This novel oxide-based photodetector demonstrates exceptional performance and reliability across a wide spectrum.

Keywords:
UV−vis−NIRbroadbandhigh-entropy oxidemultielementsphotodetector

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Area of Science:

  • Materials Science
  • Optoelectronics
  • Nanotechnology

Background:

  • High-entropy oxides (HEOs) are emerging materials with unique properties.
  • Developing efficient and reliable photodetectors is crucial for various optical applications.

Purpose of the Study:

  • To synthesize a novel HEO material for light absorption.
  • To fabricate and evaluate an HEO-based photodetector for its performance and reliability.

Main Methods:

  • Hydrothermal synthesis of a six-metal HEO (Fe, Ni, Mn, Cr, Mg, Cu).
  • Fabrication of an Ag/HEO/n-Si photodetector device.
  • Characterization of optical absorption, photoresponse, responsivity, and external quantum efficiency (EQE).
  • Assessment of device reliability through abrasion, temperature, acid resistance, and cycling tests.

Main Results:

  • The synthesized HEO demonstrated broadband absorption from 310 to 1400 nm.
  • The Ag/HEO/n-Si photodetector showed photoresponse from 365 to 1050 nm.
  • Achieved photocurrent densities of ~1 mA/cm², responsivity of 3.5 A/W (at 850 nm), and EQE >700% (at 850 nm).
  • The HEO-based photodetector exhibited excellent reliability under various stress tests.

Conclusions:

  • The novel HEO material possesses superior light-absorbing capabilities.
  • The developed HEO-based photodetector significantly outperforms existing oxide-based devices.
  • The material's oxygen vacancies contribute to its excellent optoelectronic properties and device performance.