The Enhanced Performance of Neuromorphic Computing Hardware in an ITO/ZnO/HfO_x/W Bilayer-Structured Memory Device

This study discusses the potential application of ITO/ZnO/HfO_x/W bilayer-structured memory devices in neuromorphic systems. These devices exhibit uniform resistive switching characteristics and demonstrate favorable endurance (>10²) and stable retention (>10⁴ s). Notably, the formation and rupture of filaments at the interface of ZnO and HfO_x contribute to a higher ON/OFF ratio and improve cycle uniformity compared to RRAM devices without the HfO_x layer. Additionally, the linearity of potentiation and depression responses validates their applicability in neural network pattern recognition, and spike-timing-dependent plasticity (STDP) behavior is observed. These findings collectively suggest that the ITO/ZnO/HfO_x/W structure holds the potential to be a viable memory component for integration into neuromorphic systems.