A Co-Sputtering Process Optimization for the Preparation of FeGaB Alloy Magnetostrictive Thin Films

Area of Science:

• Materials Science
• Thin Film Deposition
• Magnetism

Background:

• Magnetostrictive materials are crucial for sensors and actuators.
• Controlling thin film properties is key to optimizing device performance.
• Iron-gallium-boron (Fe_0.8Ga_0.2B) alloys exhibit promising magnetostrictive behavior.

Purpose of the Study:

• To investigate the co-sputtering process for Fe_0.8Ga_0.2B thin films.
• To modulate the soft magnetic performance by controlling sputtering parameters.
• To achieve optimal film properties for enhanced device applications.

Main Methods:

• Co-sputtering of Fe_0.8Ga_0.2B alloy thin films.
• Varying direct-current (DC) sputtering power of the FeGa target.
• Adjusting radio-frequency (RF) sputtering power of the B target.
• Characterization of film properties, including coercivity and microstructure.

Main Results:

• Fe_0.8Ga_0.2B films were deposited with uniform thickness and amorphous structure.
• Increasing FeGa DC power increased coercivity due to enhanced magnetism and grain growth.
• Increasing B RF power initially decreased then increased coercivity, indicating a crystalline-to-amorphous transition.
• The lowest coercivity of 7.51 Oe was achieved at 20 W FeGa DC power and 60 W B RF power.

Conclusions:

• The co-sputtering process allows for effective tuning of Fe_0.8Ga_0.2B thin film magnetic properties.
• Optimized sputtering parameters yield low coercivity, desirable for magnetoelectric applications.
• This work provides a pathway for improving magnetoelectric composite materials and sensor sensitivity.