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Endpoint Detection Based on Optical Method in Chemical Mechanical Polishing.

Fangxin Tian1, Tongqing Wang1, Xinchun Lu1

  • 1State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, China.

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Summary

This study introduces an optical detection system for metal chemical mechanical polishing (CMP) to accurately identify material interfaces. The developed system effectively captures endpoints, improving process control and wafer uniformity.

Keywords:
chemical mechanical polishingendpoint detectionoptical trace

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Area of Science:

  • Materials Science
  • Manufacturing Engineering
  • Optical Metrology

Background:

  • Endpoint detection is crucial in chemical mechanical polishing (CMP) for capturing material interfaces.
  • Variations in consumables and wafer thickness necessitate precise control during CMP.
  • Optical detection offers a non-invasive method for in situ monitoring.

Purpose of the Study:

  • To apply optical detection techniques to metal CMP processes.
  • To develop and implement an in situ optical measurement system for a 12-inch CMP tool.
  • To evaluate the accuracy and effectiveness of optical detection for endpoint detection in metal CMP.

Main Methods:

  • Development of an in situ optical measurement system for a 12-inch CMP tool.
  • Kinematic analysis of laser device scanning trajectory for positional accuracy.
  • Utilizing average optical data for material removal assessment.
  • Employing optical data and location for non-uniformity analysis.
  • Characterizing polishing conditions and wafer edge residuals using optical trace.
  • Applying the Pauta Criterion to identify material interface inflection points.

Main Results:

  • The developed optical system accurately captures the material interface during metal CMP.
  • Average optical data effectively describes material removal rates.
  • Optical data combined with location information reveals wafer surface non-uniformity.
  • Wafer edge polishing conditions and residuals were successfully characterized.
  • The Pauta Criterion proved effective in discriminating interface inflection points.

Conclusions:

  • The in situ optical measurement system provides accurate and effective endpoint detection for metal CMP.
  • Optical detection enhances the understanding and control of material removal and wafer uniformity.
  • This technology is valuable for compensating process variations and ensuring consistent results.