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High-Performance Photodetectors Based on Semiconducting Graphene Nanoribbons
Mingyang Wang1, Xiaoxiao Zheng1, Xiaoling Ye1
1Shandong Technology Centre of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan 250101, China.
Nano Letters
|November 27, 2023
Summary
Semiconducting graphene nanoribbons overcome graphene
Area of Science:
- Materials Science
- Nanotechnology
- Optoelectronics
Background:
- Graphene's zero-band gap and rapid photocarrier recombination limit its use in photodetectors.
- Existing graphene photodetectors suffer from low optical gain and responsivity.
Purpose of the Study:
- To synthesize semiconducting graphene nanoribbons (GNRs) with a tunable bandgap.
- To construct and evaluate a vertical heterojunction photodetector utilizing these GNRs.
Main Methods:
- Synthesis of semiconducting graphene nanoribbons with a direct bandgap of 1.8 eV.
- Fabrication of a vertical heterojunction photodetector device using the synthesized GNRs.
- Characterization of the photodetector's performance under varying bias voltages.
Main Results:
- The GNR photodetector achieved a responsivity of 1052 A/W at -5 V bias, significantly exceeding previous graphene-based devices.
- Exceptional detectivity of 3.13 × 1013 Jones and a fast response time of 310 μs were recorded.
- High performance, including responsivity of 1.04 A/W and detectivity of 2.45 × 1012 Jones, was observed even at zero bias.
Conclusions:
- Semiconducting GNRs offer a promising solution to enhance graphene-based photodetector performance.
- The developed vertical heterojunction photodetector demonstrates state-of-the-art capabilities.
- GNRs hold significant potential for advancing photodetection technologies.
