Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Biasing of P-N Junction01:16

Biasing of P-N Junction

548
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
548

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Post-Release Metallization in MEMS Silicon-to-Silicon Contact Switches for On-Resistance Improvement.

Micromachines·2026
Same author

Design, Fabrication and Characterization of Multi-Frequency MEMS Transducer for Photoacoustic Imaging.

Micromachines·2026
Same author

Fully-Flexible Multifunctional Polydimethylsiloxane (PDMS) Neural Probe With a U-Turn Polyester Microchannel.

IEEE transactions on bio-medical engineering·2025
Same author

Integrated silicon nitride devices via inverse design.

Nature communications·2025
Same author

Push-Push Electrothermal MEMS Actuators with Si-to-Si Contact for DC Power Switching Applications.

Micromachines·2025
Same author

Reconfigurable electrostatically actuated 1 × 5 rotary MOEMS switch.

Optics express·2025

Related Experiment Video

Updated: Jul 9, 2025

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
09:59

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Published on: June 23, 2018

7.8K

Silicon nitride TM-pass polarizer using inverse design.

Julian L Pita Ruiz, Frederic Nabki, Michaël Ménard

    Optics Express
    |November 29, 2023
    PubMed
    Summary

    We developed compact silicon nitride polarizers for integrated photonics, achieving high TM transmission efficiency and polarization extinction ratio. These devices are crucial for advanced optical circuits and device characterization.

    Area of Science:

    • Integrated photonics
    • Nanophotonics
    • Silicon nitride photonics

    Background:

    • Integrated silicon nitride polarizers are vital for complex photonic devices like filters and switches.
    • Accurate device characterization relies on efficient polarizers, especially with low-efficiency gratings in silicon nitride platforms.

    Purpose of the Study:

    • To design and experimentally evaluate novel TE-reflector/TM-pass polarizers for C-band operation.
    • To improve performance metrics like transmission efficiency and polarization extinction ratio (PER) for integrated polarizers.

    Main Methods:

    • Design of six prototype polarizers featuring subwavelength gratings and non-intuitive tapers.
    • Experimental characterization of prototype performance in the C-band spectrum.

    More Related Videos

    Fabrication of Magnetic Nanostructures on Silicon Nitride Membranes for Magnetic Vortex Studies Using Transmission Microscopy Techniques
    06:27

    Fabrication of Magnetic Nanostructures on Silicon Nitride Membranes for Magnetic Vortex Studies Using Transmission Microscopy Techniques

    Published on: July 2, 2018

    8.2K
    Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
    05:57

    Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

    Published on: April 1, 2020

    8.0K

    Related Experiment Videos

    Last Updated: Jul 9, 2025

    Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
    09:59

    Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

    Published on: June 23, 2018

    7.8K
    Fabrication of Magnetic Nanostructures on Silicon Nitride Membranes for Magnetic Vortex Studies Using Transmission Microscopy Techniques
    06:27

    Fabrication of Magnetic Nanostructures on Silicon Nitride Membranes for Magnetic Vortex Studies Using Transmission Microscopy Techniques

    Published on: July 2, 2018

    8.2K
    Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
    05:57

    Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

    Published on: April 1, 2020

    8.0K

    Main Results:

    • Achieved a TM transmission efficiency of -0.28 dB.
    • Obtained a polarization extinction ratio (PER) of 18.2 dB.
    • Demonstrated performance with a compact device size of 11 µm × 2 µm.

    Conclusions:

    • The developed compact polarizers set a new benchmark for silicon nitride photonic platforms.
    • These polarizers offer high performance crucial for integrated photonic devices and testing.
    • The design advancements enable precise polarization control on a single circuit.