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Related Concept Videos

Semiconductors01:22

Semiconductors

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There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
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MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

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Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
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Types of Semiconductors01:20

Types of Semiconductors

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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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Non-ohmic Devices00:51

Non-ohmic Devices

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In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
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    Area of Science:

    • Photonics and Optical Engineering
    • Materials Science
    • Applied Physics

    Background:

    • Mid-infrared (MIR) photonics are crucial for sensing applications.
    • Existing MIR photonic systems often lack compactness and cost-effectiveness.
    • Silicon-on-insulator (SOI) platforms offer potential for integrated photonic solutions.

    Purpose of the Study:

    • To demonstrate low-loss operation of micro-meter scale SOI photonic integration elements in the 2.6-2.7 µm wavelength region.
    • To develop compact and cost-effective photonic systems for MIR sensing.
    • To present record low propagation and bend losses for SOI waveguides.

    Main Methods:

    • Utilized a 3 µm thick silicon core layer SOI platform.
    • Fabricated and characterized single-mode waveguides and miniaturized bend geometries.
    • Designed and simulated an echelle grating-based wavelength filter.
    • Measured waveguide propagation losses and bend losses.

    Main Results:

    • Achieved record low single-mode waveguide propagation losses of 0.56 ± 0.09 dB/cm.
    • Demonstrated bend losses below 0.08 dB for miniaturized bend geometries.
    • Presented an echelle grating wavelength filter with a linewidth of ~1.56 nm, selecting channels within the 2.64-2.7 µm band.
    • Validated experimental results with simulations.

    Conclusions:

    • The 3 µm thick SOI platform enables low-loss and low-birefringence waveguides in the 2.6-2.7 µm range.
    • This technology is suitable for developing compact and cost-effective MIR photonic integrated circuits.
    • The demonstrated components pave the way for advanced MIR sensing applications.