Towards efficient broadband parametric conversion in ultra-long Si₃N₄ waveguides.

Area of Science:

• Photonics and Optical Engineering
• Materials Science

Background:

• On-chip broadband parametric gain and wavelength conversion are crucial for integrated photonic circuits.
• Meter-long silicon nitride waveguides have shown potential for continuous-traveling-wave parametric gain.
• The impact of spiral structures on waveguide performance and bandwidth remains unstudied.

Purpose of the Study:

• Investigate efficiency-bandwidth performance in up to 2-meter-long silicon nitride waveguides for broadband operation.
• Analyze conversion efficiency fluctuations in meter-long silicon nitride waveguides.
• Evaluate the effectiveness of temperature control in mitigating these fluctuations.

Main Methods:

• Fabrication and characterization of meter-long silicon nitride waveguides.
• Measurement of parametric gain and conversion efficiency across a broad bandwidth.
• Analysis of efficiency fluctuations and the impact of controlled temperature variations.

Main Results:

• Demonstrated efficiency-bandwidth performance in extended silicon nitride waveguides.
• Identified and analyzed conversion efficiency fluctuations in meter-long devices.
• Showcased the potential of temperature control to stabilize device performance.

Conclusions:

• Extended silicon nitride waveguides are promising for on-chip broadband parametric amplification.
• Understanding and controlling efficiency fluctuations is key for practical applications.
• Temperature stabilization offers a viable method to enhance the reliability of these photonic devices.