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Updated: Jul 9, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Pulse-controlled qubit in semiconductor double quantum dots
Aleksander Lasek1,2, Hugo V Lepage3, Kexin Zhang3
1Cavendish Laboratory, J. J. Thomson Avenue, Cambridge, CB3 0HE, UK. alasek@umd.edu.
Abstract:
We present a numerically-optimized multipulse framework for the quantum control of a single-electron double quantum dot qubit. Our framework defines a set of pulse sequences, necessary for the manipulation of the ideal qubit basis, that avoids errors associated with excitations outside the computational subspace. A novel control scheme manipulates the qubit adiabatically, while also retaining high speed and ability to perform a general single-qubit rotation. This basis generates spatially localized logical qubit states, making readout straightforward. We consider experimentally realistic semiconductor qubits with finite pulse rise and fall times and determine the fastest pulse sequence yielding the highest fidelity. We show that our protocol leads to improved control of a qubit. We present simulations of a double quantum dot in a semiconductor device to visualize and verify our protocol. These results can be generalized to other physical systems since they depend only on pulse rise and fall times and the energy gap between the two lowest eigenstates.
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