High electrical characteristics through graphene oxide doping process on physicochemically reformed inorganic thin
Da-Bin Yang1, Jin Young Oh1, Bo-Kyeong Choi1
1IT Nano Electronic Device Laboratory, Department of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Republic of Korea.
Abstract:
This study investigated the improvement of the electro-optical properties of a liquid crystal (LC) cell fabricated through brush coating using graphene oxide (GO) doping. The physical deformation of the surface was analyzed using atomic force microscopy. The size of the groove increased as the GO dopant concentration increased, but the direction of the groove along the brush direction was maintained. X-ray photoelectron spectroscopy analysis confirmed that the number of C-C and O-Sn bonds increased as the GO concentration increased. Since the van der Waals force on the surface increases as the number of O-metal bonds increases, we were able to determine why the anchoring energy of the LC alignment layer increased. This was confirmed by residual DC voltage and anchoring energy measurements that were later performed. As the GO concentration increased, the width of the hysteresis curve decreased, indicating that the residual DC voltage decreased. Additionally, the 15% GO-doped sample exhibited a significant increase in its anchoring energy up to 1.34 × 10-3 J/m2, which is similar to that of rubbed polyimide. It also secured a high level of electro-optical properties and demonstrated potential as a next-generation thin-film display despite being produced via a simple brush-coating process.
