Coplanar MoS₂-MoTe₂ Heterojunction With the Same Crystal Orientation

Area of Science:

• Materials Science
• Nanotechnology
• Condensed Matter Physics

Background:

• Two-dimensional (2D) coplanar heterostructures are crucial for high-performance optoelectronic devices, particularly p-n heterojunctions.
• Existing methods struggle with site-controllable and shape-specific fabrication of 2D coplanar heterojunctions with identical crystal orientations.

Purpose of the Study:

• To report a novel route for fabricating MoS2-MoTe2 coplanar heterojunctions with the same crystal orientation.
• To demonstrate arbitrary shape control of these heterojunctions using electron beam lithography.

Main Methods:

• Exploiting phase transition and atomic rearrangement during 2H-MoTe2 growth.
• Utilizing Raman spectroscopy and electron microscopy for characterization.
• Employing electron beam lithography for shape definition.

Main Results:

• Successfully fabricated MoS2-MoTe2 coplanar heterojunctions with identical crystal orientations.
• Confirmed single-crystal nature and lattice alignment of both MoS2 and MoTe2 components.
• Demonstrated n-type MoS2 and p-type MoTe2 channel characteristics.

Conclusions:

• The developed coplanar epitaxy technology allows for arbitrary shape control of 2D heterojunctions.
• This method facilitates the preparation of novel coplanar heterostructures with advanced device functionalities.
• The approach holds promise for future optoelectronic device development.