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P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Updated: Jun 24, 2026

Improved Heterojunction Quality in Cu2O-based Solar Cells Through the Optimization of Atmospheric Pressure Spatial Atomic Layer Deposited Zn1-xMgxO

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Published on: July 31, 2016

Co-Self-Assembled Monolayers Modified NiO_x for Stable Inverted Perovskite Solar Cells.

Qi Cao^1,2, Tianyue Wang¹, Xingyu Pu²

¹Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, 999077, P. R. China.

Advanced Materials (Deerfield Beach, Fla.)

|January 10, 2024

Summary

This summary is machine-generated.

This study introduces a novel Co-SAM strategy to enhance perovskite solar cells (PSCs). By doping [4-(3,6-dimethyl-9H-carbazol-9yl)butyl]phosphonic acid with phosphorylcholine chloride, defect passivation is improved, boosting PSC efficiency and stability.

Keywords:

buried interface inverted perovskite solar cells self‐assembled monolayer

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Area of Science:

Materials Science
Renewable Energy
Nanotechnology

Background:

Buried interfaces in NiO_x hinder inverted perovskite solar cell (PSC) performance.
Existing self-assembled molecules (SAMs) like [4-(3,6-dimethyl-9H-carbazol-9yl)butyl]phosphonic acid (Me-4PACz) have limitations in defect passivation.

Purpose of the Study:

To develop a Co-SAM strategy to improve the buried interface of NiO_x in PSCs.
To enhance defect passivation, device efficiency, and operational stability of PSCs.

Main Methods:

Doping Me-4PACz with phosphorylcholine chloride (PC) to create a Co-SAM.
Utilizing the phosphate group, chloride ions, and quaternary ammonium ions in PC for defect passivation at the NiO_x surface and within the perovskite film.
Investigating the impact of Co-SAM on perovskite crystal growth, carrier transport, and film stress.

Main Results:

Co-SAM improved monolayer coverage and reduced leakage current.
Effective passivation of NiO_x surface defects and defects within the perovskite film.
Enhanced perovskite crystal growth, suppressed nonradiative recombination, and accelerated carrier transmission.
Achieved a power conversion efficiency of 25.09% and maintained 93% of initial efficiency after 1000 hours of operation.

Conclusions:

The Co-SAM strategy effectively addresses buried interface issues in PSCs.
Co-SAM significantly enhances both the power conversion efficiency and long-term operational stability of PSCs.
This approach offers a promising route for developing high-performance and durable perovskite solar cells.