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Updated: Jul 5, 2025

Combining Solid-state and Solution-based Techniques: Synthesis and Reactivity of ChalcogenidoplumbatesII or IV
Published on: December 29, 2016
Chalcogenide Ovonic Threshold Switching Selector
Zihao Zhao1,2, Sergiu Clima3, Daniele Garbin3
1National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, People's Republic of China.
Ovonic threshold switch (OTS) devices show promise for high-density memory. Research explores OTS materials, switching mechanisms, and applications in emerging technologies like neuromorphic computing.
Area of Science:
- Materials Science
- Electrical Engineering
- Computer Science
Background:
- The data explosion necessitates advanced memory technologies beyond Flash and DRAM.
- Intel Optane, a 3D phase-change memory, utilizes ovonic threshold switch (OTS) selectors.
- Chalcogenide-based OTS devices are gaining attention for their unique properties.
Purpose of the Study:
- To review the discovery and electrical characteristics of OTS devices.
- To explore recent advancements in OTS materials (Se-based, Te-based, S-based).
- To discuss various OTS switching mechanism models and research progress.
Main Methods:
- Literature review of OTS phenomenon discovery and evolution.
- Analysis of key electrical parameters and material systems.
- Examination of theoretical models for OTS switching mechanisms.
Main Results:
- OTS devices are crucial components in cross-point architectures for 3D memory.
- Diverse material systems and switching models contribute to OTS performance.
- Significant progress has been made in understanding and innovating OTS mechanisms.
Conclusions:
- OTS devices are successfully applied in 3D high-density memory.
- Emerging applications like self-selecting memory and neuromorphic computing show great potential.
- Continued research into OTS materials and mechanisms will drive future memory innovations.
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