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Pressure-Modulated Structural and Magnetic Phase Transitions in Two-Dimensional FeTe: Tetragonal and Hexagonal
Wuxiao Han1,2, Jiajia Feng3, Hongliang Dong3
1Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology (ARIMS), Beijing 100081, China.
Investigating two-dimensional (2D) iron telluride (FeTe) under pressure reveals distinct magnetic transitions. Tetragonal FeTe shifts from antiferromagnetic to ferromagnetic at 3 GPa, while hexagonal FeTe maintains ferromagnetism up to 15 GPa.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Nanotechnology
Background:
- Two-dimensional (2D) iron chalcogenides are crucial for understanding complex transition mechanisms.
- These materials hold potential for spintronics and nanoelectronics applications.
- Hydrostatic pressure is a key tool for inducing and studying phase transitions in materials.
Purpose of the Study:
- To systematically investigate the structural evolution and transport properties of 2D FeTe under extreme conditions.
- To compare the behavior of tetragonal (t) and hexagonal (h) FeTe symmetries under pressure.
- To map the temperature-pressure (T-P) phase diagrams for both t-FeTe and h-FeTe.
Main Methods:
- Experimental investigation of 2D FeTe under high hydrostatic pressure.
- Comparison of structural and transport characteristics between tetragonal and hexagonal FeTe.
- Utilizing electrical transport measurements and Raman spectroscopy to confirm magnetic states.
Main Results:
- Tetragonal FeTe exhibits a pressure-induced transition from antiferromagnetic to ferromagnetic state around 3 GPa, linked to structural collapse.
- Hexagonal FeTe retains its ferromagnetic order up to 15 GPa, confirmed by transport and Raman data.
- Detailed T-P phase diagrams for both t-FeTe and h-FeTe were successfully mapped.
Conclusions:
- The study elucidates distinct pressure-dependent magnetic behaviors in different 2D FeTe phases.
- Findings provide a foundation for understanding the extraordinary properties of Fe chalcogenides.
- Results pave the way for developing advanced applications in spintronics and nanoelectronics.
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