Hafnia-Based Ferroelectric Memory: Device Physics Strongly Correlated with Materials Chemistry

Hafnia-based ferroelectrics and their semiconductor applications are reviewed, focusing on next-generation dynamic random-access-memory (DRAM) and Flash. The challenges of achieving high endurance and high write/read speed and the optimal material properties to achieve them are discussed. In DRAM applications, the trade-off between remanent polarization (P_r), endurance, and operation speed is highlighted, focusing on reducing the critical material property E_c (coercive field). Novel phase formation and interfacial redox chemistry are reviewed as potential game-changers for ferroelectric memories. Regarding Flash operation, the need for an ideal P_r and E_c ratio is emphasized, as excessive P_r can lead to charge trapping, resulting in fatigue and pass disturbance in the NAND array. Achieving the right balance of P_r and E_c for ferroelectric NAND with hafnia-based ferroelectrics remains challenging. This Perspective also recognizes technical advancements in FeFET technology, offering potential solutions for improved performance and casting a positive outlook on the future of ferroelectric memory technology.