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Topological magnetoelectric response in ferromagnetic axion insulators
Yuhao Wan1, Jiayu Li1, Qihang Liu1,2,3
1Department of Physics and Shenzhen Institute for Quantum Science and Engineering (SIQSE), Southern University of Science and Technology, Shenzhen 518055, China.
Researchers theoretically demonstrate the topological magnetoelectric effect (TME) in axion insulators. This work proposes a realistic material system and geometry for observing TME, paving the way for experimental realization.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Topological Quantum Phenomena
Background:
- The topological magnetoelectric effect (TME) is a key prediction of topological field theory for emergent topological phenomena.
- Direct experimental observation of TME has been hindered by the complex magnetic configurations needed to gap surface states.
Purpose of the Study:
- To theoretically propose a realistic material system and geometry for realizing the topological magnetoelectric effect.
- To identify a viable pathway for the direct experimental observation of TME.
Main Methods:
- Theoretical modeling of axion insulators in a ferromagnetic configuration, specifically the MnBi2Te4/(Bi2Te3)n family.
- Design of a triangular prism geometry to magnetically gap all surface states.
- Analysis of surface Hall currents and orbital moments under an applied electric field.
Main Results:
- Demonstrated that axion insulators with simple ferromagnetic order can host TME.
- Proposed a triangular prism geometry where all surface states are magnetically gapped.
- Predicted a nearly half-quantized orbital moment and a gapless chiral hinge mode under an electric field, distinguishable by field reversal.
Conclusions:
- The MnBi2Te4/(Bi2Te3)n material family offers a promising platform for observing TME.
- The proposed geometry and predicted signatures facilitate the distinction of orbital magnetization from different topological origins.
- This theoretical work provides a direct route towards the experimental realization of the topological magnetoelectric effect.
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