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Quantum Efficiency Measurement and Modeling of Silicon Sensors Optimized for Soft X-ray Detection
Maria Carulla1, Rebecca Barten1, Filippo Baruffaldi1
1Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland.
Sensors (Basel, Switzerland)
|February 10, 2024
Summary
Researchers improved soft X-ray detection by enhancing silicon sensor quantum efficiency. This breakthrough boosts performance for hybrid pixel detectors at synchrotrons and X-ray free-electron lasers.
Area of Science:
- X-ray detector technology
- Materials science for radiation detection
Background:
- Hybrid pixel detectors are crucial for synchrotron and X-ray free-electron laser facilities.
- Detector performance below 3 keV is limited by low quantum efficiency and signal-to-noise ratio.
Purpose of the Study:
- To enhance the quantum efficiency of silicon sensors for soft X-ray detection.
- To improve the performance of hybrid pixel detectors at low energies.
Main Methods:
- Refined silicon sensor entrance window design through surface passivation.
- Optimized the dopant profile of the n+ region.
- Fabricated planar sensors with thin entrance windows and tested process variations.
Main Results:
- Achieved a significant increase in quantum efficiency for 250 eV photons, from 0.5% to 62%.
- The enhanced quantum efficiency is comparable to backside-illuminated scientific CMOS sensors.
- Identified the influence of various process parameters on quantum efficiency.
Conclusions:
- Surface passivation and optimized doping profiles dramatically improve soft X-ray detection.
- The developed silicon sensors offer a viable alternative for low-energy X-ray applications.
- A strategy for further quantum efficiency improvements has been outlined.
