Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Schottky Barrier Diode01:27

Schottky Barrier Diode

355
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
355

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Deep Learning Inverse Design of Phase-Change Reconfigurable Terahertz Metadevices for Multidimensional Secure Communication.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Ferron-driven photoferroic hysteresis in van der Waals CuInP<sub>2</sub>S<sub>6</sub>.

Nature communications·2026
Same author

Photo-Reconfigurable Supercoupling Induced Transparency in On-Chip Topological Edge State Cavities.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Ultrafast Control of Néel Vector in Collinear Antiferromagnet MnPt.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2025
Same author

Emergent Berry Curvature in Inversion-Symmetric Photonic Crystals for Ultraconfined Topological States.

Advanced materials (Deerfield Beach, Fla.)·2025
Same author

On-chip topological edge state cavities.

Light, science & applications·2025
Same journal

Amorphous High-Entropy Oxides With High-Valent Metal and Oxygen-Vacancy Pairs for Thermally Stable Catalytic Oxidation.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

H<sub>2</sub>S Self-Supplied Micelles Reverse Tumor-Immune Effector Cells Energy Metabolisms to Boost Breast Cancer Immunotherapy With Microenvironment Normalization.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

Feed-Draw Printing Enables Monolithically Integrated Flexible Sensors With High Interfacial Toughness and Wide Linear Range.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

Space-Time Coding Conformal Metasurfaces for Multifrequency Beam Steering and Shaping.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

3D Printing of Magnetic Soft Materials for Functional Structures and Devices.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

Photothermal-Activable Artificial Macrophage With Amplified Systemic Antibacterial Responses to Combat Primary and Secondary Infection.

Advanced materials (Deerfield Beach, Fla.)·2026
See all related articles

Related Experiment Video

Updated: Jul 3, 2025

Quasi-light Storage for Optical Data Packets
07:45

Quasi-light Storage for Optical Data Packets

Published on: February 6, 2014

10.8K

150 Gbps THz Chipscale Topological Photonic Diplexer.

Manoj Gupta1,2, Abhishek Kumar1,2, Prakash Pitchappa3

  • 1Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.

Advanced Materials (Deerfield Beach, Fla.)
|February 13, 2024
PubMed
Summary
This summary is machine-generated.

This study introduces a silicon topological diplexer for on-chip communication. It enables two high-speed terahertz channels using topological edge modes, achieving 150 Gbit/s capacity with minimal interference.

Keywords:
Silicon photonicsdemultiplexermultiplexerphotonic filterterahertz 6G to XG wireless communicationsterahertz interconnectsterahertz topological photonic integrated circuitstopological waveguides

More Related Videos

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
12:19

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

8.4K
High-Throughput Total Internal Reflection Fluorescence and Direct Stochastic Optical Reconstruction Microscopy Using a Photonic Chip
14:09

High-Throughput Total Internal Reflection Fluorescence and Direct Stochastic Optical Reconstruction Microscopy Using a Photonic Chip

Published on: November 16, 2019

6.9K

Related Experiment Videos

Last Updated: Jul 3, 2025

Quasi-light Storage for Optical Data Packets
07:45

Quasi-light Storage for Optical Data Packets

Published on: February 6, 2014

10.8K
Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
12:19

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

8.4K
High-Throughput Total Internal Reflection Fluorescence and Direct Stochastic Optical Reconstruction Microscopy Using a Photonic Chip
14:09

High-Throughput Total Internal Reflection Fluorescence and Direct Stochastic Optical Reconstruction Microscopy Using a Photonic Chip

Published on: November 16, 2019

6.9K

Area of Science:

  • Photonics
  • Quantum Physics
  • Electrical Engineering

Background:

  • Photonic diplexers are crucial for high-speed on-chip communication.
  • Efficiently dividing the spectrum into non-overlapping sub-bands for frequency-selective channels remains a challenge.

Purpose of the Study:

  • To report an on-chip topological diplexer for terahertz frequency band filtering.
  • To demonstrate high-speed data transfer using topological edge modes and Klein tunneling.

Main Methods:

  • Fabrication of a silicon topological diplexer chip.
  • Utilizing Klein tunneling of topological edge modes for frequency filtering.
  • Implementing quadrature amplitude modulation (QAM) for data transmission.

Main Results:

  • Achieved two high-speed channels, each with 12.5 GHz bandwidth, at 305 and 321.6 GHz carrier frequencies.
  • Demonstrated a combined diplexer capacity of 150 Gbit/s.
  • Successfully suppressed interference between adjacent channels using a guard band.

Conclusions:

  • Topologically protected edge modes effectively mitigate frequency-selective fading for broadband signals.
  • The developed topological diplexer shows significant promise for integrated photonic applications in terahertz and telecommunications.
  • Potential applications include lossless topological multiplexers, interconnects, antennas, and modulators for future wireless generations (6G and beyond).