Tuning d-orbitals to control spin-orbit coupling in terminated MXenes
Tao Yang1, Xiaojun Liu1, Jian Fang1
1Institute of Advanced Materials, School of Electromechanical and Intelligent Manufacturing, Huanggang Normal University, Huanggang, Hubei, 438000, China. yangtao@hgnu.edu.cn.
Orbital effects can enhance spin-orbit coupling (SOC) in topological insulators (TIs), offering a new design strategy. This study shows how tuning hybridization in 2D MXenes boosts nontrivial bandgaps for TI devices.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Chemistry
Background:
- Spin-orbit coupling (SOC) is crucial for topological insulators (TIs), typically linked to relativistic effects.
- The role of orbital effects in modulating SOC and bandgaps in TIs has been largely overlooked.
- Designing materials with large nontrivial bandgaps is essential for advanced TI devices.
Purpose of the Study:
- To demonstrate a novel method for controlling effective SOC and nontrivial bandgaps in 2D materials.
- To investigate the influence of orbital effects on SOC in MXene-based topological insulators.
- To reduce the element-dependency in tuning SOC for TI applications.
Main Methods:
- First-principles calculations were employed to study 5d W2CO2 and 4d Mo2CO2 MXenes.
- The hybridization strength between transition metal atoms (W, Mo) and ligand elements (C, O) was systematically varied.
- Electronic band structures and spin-orbit coupling effects were analyzed.
Main Results:
- Decreasing hybridization between W atoms and C/O in 2D W2CO2 was found to enhance the nontrivial bandgaps at the Γ-point.
- Weak hybridization promotes electron localization in d-orbitals, increasing on-site Coulomb repulsion and orbital polarization.
- Enhanced orbital polarization directly boosts the SOC effect, leading to larger bandgaps.
- Similar trends were observed in 4d Mo2CO2 MXenes.
Conclusions:
- Orbital effects provide an efficient and direct pathway to control nontrivial bandgaps in 2D MXene topological insulators.
- Tuning hybridization strength is a viable strategy to engineer SOC and bandgaps, offering an alternative to element selection.
- This research opens new possibilities for designing high-performance TI devices by manipulating orbital interactions.
Related Concept Videos
Valence Bond Theory
Spin–Spin Coupling: Two-Bond Coupling (Geminal Coupling)
The central atom need not be NMR-active because its electrons are affected by the electron polarization of the spin-active atoms. However, spin information is transmitted less effectively than in one-bond coupling, and 2J values are usually weaker than 1J values. The energy of...
Spin–Spin Coupling: One-Bond Coupling
Spin–Spin Coupling Constant: Overview
Qualitatively, any spin plus-half nucleus polarizes the spins of its electrons to the minus-half state. Consequently, the paired electron in the hydrogen–carbon bond must...
Spin–Spin Coupling: Three-Bond Coupling (Vicinal Coupling)
The extent of coupling depends on the C‑C bond length, the two H‑C‑C angles, any electron-withdrawing substituents, and the dihedral angle between the...
Hybridization of Atomic Orbitals II


