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Updated: May 21, 2026

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films
Published on: September 8, 2017
Correction: How fast do defects migrate in halide perovskites: insights from on-the-fly machine-learned force fields
Mike Pols1, Victor Brouwers1, Sofía Calero1
1Materials Simulation & Modelling, Department of Applied Physics, Eindhoven University of Technology, Eindhoven 5600 MB, The Netherlands. s.x.tao@tue.nl.
This correction clarifies defect migration speeds in halide perovskites. On-the-fly machine-learned force fields provide new insights into these crucial material properties.
Area of Science:
- Materials Science
- Computational Chemistry
- Solid-State Physics
Context:
- Halide perovskites are promising materials for optoelectronic applications.
- Understanding defect migration is crucial for device stability and performance.
- Previous studies have explored defect dynamics using various computational methods.
Purpose:
- To correct and refine the findings presented in the original article regarding defect migration speeds.
- To provide accurate data derived from on-the-fly machine-learned force fields.
- To enhance the understanding of defect behavior in halide perovskites.
Summary:
- The correction addresses specific numerical values and interpretations related to defect migration rates.
- It reaffirms the utility of on-the-fly machine-learned force fields for accurate simulations.
- The revised data offers a more precise picture of how defects move within halide perovskite structures.
Impact:
- Ensures the scientific community uses accurate data for halide perovskite research.
- Facilitates more reliable predictions of material stability and device longevity.
- Improves the foundational knowledge for designing next-generation perovskite-based technologies.
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