Native Approach to Controlled-Z Gates in Inductively Coupled Fluxonium Qubits.

Xizheng Ma1, Gengyan Zhang1, Feng Wu1

  • 1DAMO Quantum Laboratory, Alibaba Group, Hangzhou, Zhejiang 311121, China.

Physical Review Letters
|February 23, 2024
PubMed
Summary

Fluxonium qubits offer charge protection but limited interactions. This study introduces inductive coupling for versatile fluxonium qubit interactions, achieving high-fidelity entanglement and a 20 ns controlled-Z gate.

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