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P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Updated: Jul 2, 2025

Developing High Performance GaP/Si Heterojunction Solar Cells

Developing High Performance GaP/Si Heterojunction Solar Cells

Published on: November 16, 2018

Ultra-High Concentration Vertical Homo-Multijunction Solar Cells for CubeSats and Terrestrial Applications.

Ahmad A Abushattal^1,2, Antonio García Loureiro¹, Nour El I Boukortt¹

¹Centro Singular de Investigación en Tecnoloxías de Información (CiTIUS), Universidad de Santiago de Compostela, 15705 Santiago de Compostela, Spain.

|February 24, 2024

Summary

This study explores vertical multijunction solar cells for ultra-high concentration photovoltaics. Optimized gallium arsenide (GaAs) cells achieved a 30.2% conversion efficiency, minimizing losses for high-performance applications.

Keywords:

CubeSats GaAs solar cell TCAD air mass 1.5 simulation vertical-multijunction solar cell

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Last Updated: Jul 2, 2025

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Published on: July 31, 2016

Area of Science:

Photovoltaics
Semiconductor Devices
Materials Science

Background:

Ultra-high concentration photovoltaics (UHCPV) require advanced solar cell designs to maximize efficiency.
Gallium arsenide (GaAs) based multijunction solar cells offer high performance for terrestrial and space applications.
Minimizing resistive losses in vertical multijunction (VMJ) cells is crucial at high concentration levels.

Purpose of the Study:

To investigate advances in VMJ solar cells for UHCPV applications.
To optimize GaAs-based solar cell structures for enhanced conversion efficiency.
To analyze the impact of design parameters on device performance under specific conditions.

Main Methods:

Simulations using ATLAS Silvaco 5.36 R, a technology computer-aided design (TCAD) tool.
Design and analysis of homo-multijunction GaAs solar cells.
Optimization of interconnect layers, cell structure, doping density, and sun concentrations.

Main Results:

A vertical tunnel junction design was implemented to reduce resistive losses.
Device performance was analyzed under direct air mass conditions (AM1.5D).
An optimized GaAs solar cell configuration achieved a conversion efficiency of 30.2% at maximum concentration.

Conclusions:

The proposed VMJ GaAs solar cell structure demonstrates high potential for UHCPV.
Careful optimization of interconnect layers and design parameters is essential for high efficiency.
The simulation results validate the reliability and performance of the investigated solar cell model.