Combining thermal scanning probe lithography and dry etching for grayscale nanopattern amplification
Berke Erbas1, Ana Conde-Rubio1,2, Xia Liu1,3
1Microsystems Laboratory, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, 1015 Switzerland.
Microsystems & Nanoengineering
|February 26, 2024
Summary
This study introduces a novel method to amplify nanopatterns in silicon dioxide (SiO2) using thermal resist nanowriting and plasma etching. This technique enables high-aspect-ratio, smooth grayscale nanostructures for advanced optical and electronic devices.
Area of Science:
- Materials Science
- Nanotechnology
- Optics
Background:
- Grayscale structured surfaces with nanometer-scale features are crucial for optics and fluidics.
- Thermal scanning probe lithography offers high resolution but has limited depth in polymers.
Purpose of the Study:
- To develop a method for amplifying polymer nanopatterns into silicon dioxide (SiO2) with high aspect ratios and minimal roughness.
- To demonstrate the fabrication of grayscale dielectric nanostructures for applications in nanoimprint lithography and 2D material strain engineering.
Main Methods:
- Combination of thermal resist nanowriting and plasma dry etching with substrate cooling.
- Fabrication of sinusoidal nanopatterns in SiO2 with 400 nm pitch and 150 nm depth.
Main Results:
- Achieved up to 10-fold amplification of polymer nanopatterns into SiO2.
- Produced smooth grayscale nanostructures in SiO2 without shape distortion.
- Demonstrated pattern transfer with minimal increase in surface roughness.
Conclusions:
- The developed method enables efficient aspect ratio amplification and smooth grayscale nanopatterning.
- The technique has potential for fabricating advanced photonic and nanoelectronic devices.
- Applications include scalable manufacturing via nanoimprint lithography and strain nanoengineering of 2D materials.
