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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

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Towards graphene-based asymmetric diodes: a density functional tight-binding study.

Elaheh Mohebbi¹, Eleonora Pavoni¹, Luca Pierantoni²

¹Department of Science and Engineering of Matter, Environment and Urban Planning (SIMAU), Marche Polytechnic University 60131 Ancona Italy e.laudadio@staff.univpm.it.

Nanoscale Advances

|February 29, 2024

Summary

This summary is machine-generated.

This study explores asymmetric graphene devices (AGDs) using density functional tight-binding calculations. The Graphene-N4 device shows high asymmetry, offering potential for designing novel electronic components.

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Published on: June 25, 2020

Area of Science:

Condensed Matter Physics
Materials Science
Nanotechnology

Background:

Asymmetric graphene devices (AGDs) are crucial for next-generation electronics.
Understanding their electrical properties and transport behavior is essential for device optimization.

Purpose of the Study:

To investigate the electrical properties and transport behavior of asymmetric graphene devices (AGDs).
To explore the impact of varying neck sizes and gate voltages on device performance.

Main Methods:

Self-consistent charge density functional tight-binding (DFTB) calculations were employed.
Three AGDs with different neck sizes (8 nm, 6 nm, 4 nm) were simulated.
Devices were tested under zero and +20 V gate voltage conditions.

Main Results:

All simulated AGDs exhibited strong asymmetric current-voltage (I(V)) characteristics.
Graphene-N4 demonstrated high asymmetry (A=1.40) and maximum transmittance (T=6.72).
Gate voltage significantly enhanced asymmetry in Graphene-N6/Graphene-N8 devices.

Conclusions:

The findings provide numerical insights into designing tailored geometric diodes.
AGDs offer promising prospects for novel electronic applications.
Device geometry and gate voltage are key parameters for tuning asymmetry.