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Characterization of Anisotropic Leaky Mode Modulators for Holovideo
Published on: March 19, 2016
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VO2/MoO3 Heterojunctions Artificial Optoelectronic Synapse Devices for Near-Infrared Optical Communication.
Fuhai Guo1,2, Yunjie Liu1, Mingcong Zhang2
1College of Science, China University of Petroleum, Qingdao, Shandong, 266580, China.
Small (Weinheim an Der Bergstrasse, Germany)
|March 8, 2024
Summary
High-performance near-infrared optoelectronic synapses (OES) were developed using VO2/MoO3 heterojunctions. These devices enable brain-inspired computing for optical communication by mimicking synaptic functions with light signals.
Area of Science:
- Materials Science
- Neuromorphic Engineering
- Optoelectronics
Background:
- Artificial optoelectronic synapses (OES) are key for brain-inspired computing.
- Existing OES are limited in near-infrared wavelengths, hindering optical communication applications.
- Novel heterojunctions are needed for advanced neuromorphic systems.
Purpose of the Study:
- To develop high-performance near-infrared OES devices.
- To explore the potential of VO2/MoO3 heterojunctions for neuromorphic computing.
- To enable OES applications in modern optical communication.
Main Methods:
- Fabrication of VO2/MoO3 heterojunctions using glancing-angle deposition.
- Tuning oxygen defects in VO2 films to control electrical synaptic functions.
- Characterization of photonic synaptic properties at O and C communication bands (1342 nm and 1550 nm).
Main Results:
- Demonstrated versatile electrical and photonic synaptic functions (short/long-term plasticity, learning behavior).
- Achieved accurate light signal conversion (Morse code) to synaptic currents.
- Constructed a 3x3 OES array showcasing image perception and learning capabilities.
Conclusions:
- Defect and interface engineering effectively modulate OES synaptic plasticity.
- VO2/MoO3 heterojunctions offer a viable platform for near-infrared OES.
- Developed strategies for advanced artificial neuromorphic visual systems in optical communication.
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